Bhubaneswar: SiCSem Private Limited and the Indian Institute of Technology Bhubaneswar (IIT), Bhubaneswar signed a Memorandum of Agreement to collaborate on research in the field of Compound Semiconductors.
The first project to be carried out as part of the agreement would indigenise Silicon Carbide (SiC) crystal growth at IIT-Bhubaneswar. Estimated to cost Rs 45 crore, this project would bring in the know-how of high volume production of 150 mm and 200 mm SiC wafers, according to a press release of Ministry of Education on Saturday.
SiCSem Private Limited plans to establish a SiC process fabrication and ATMP plant in Odisha. This will help India become self-sufficient in power semiconductor devices for advanced technologies such as electric vehicles (EVs), fast chargers, green energy, PV inverters, motor controls and beyond 5G communication.
Prof Shreepad Karmalkar, Director of IIT-Bhubaneswar and an expert in semiconductor devices, said the collaboration would promote innovation and self-reliance in SiC crystal growth. It also represents a major industry-academia partnership for the IIT.
“The collaboration will contribute significantly to development of semiconductor ecosystem in Odisha and the nation’s semiconductor industry, in line with India Semiconductor Mission, Make in India and Atmanirbhar Bharat initiatives,” he added.
